AO4801A 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -5a r ds(on) (at v gs =-10v) < 48m w r ds(on) (at v gs =-4.5v) < 57m w r ds(on) (at v gs =-2.5v) < 80m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 90 40 maximum junction-to-ambient a c/w t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current 2 v t a =70c a i d -28 -5 -4 mj avalanche current c 14 the AO4801A combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is suitable for use as a load switch or in pwm applications. v units parameter absolute maximum ratings t a =25c unless otherwise noted -30v maximum 12 gate-source voltage drain-source voltage -30 r q ja 48 74 62.5 17 t a =25c c thermal characteristics junction and storage temperature range -55 to 150 a 1.3 w units parameter typ max g1 d1 s1 g2 d2 s2 soic-8 top view bottom view pin1 g1 s1 g2 s2 d1 d1 d2 d2 12 3 4 87 6 5 soic-8 top view rev 3: mar. 2011 www.aosmd.com page 1 of 5
AO4801A symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.5 -0.9 -1.3 v i d(on) -28 a 40 48 t j =125c 60 72 45 57 m w 60 80 m w g fs 18 s v sd -0.7 -1 v i s -2.5 a c iss 515 645 780 pf c oss 55 80 105 pf c rss 30 55 80 pf r g 4 7.8 12 w q g (4.5v) 5 7 9 nc q gs 1.5 nc q gd 2.5 nc t d(on) 6.5 ns t r 3.5 ns t d(off) 41 ns t f 9 ns t rr 11 15 ns q rr 3.5 5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-10v, i d =-5a reverse transfer capacitance i f =-5a, di/dt=100a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-5a v gs =-4.5v, i d =-3.5a v gs =-2.5v, i d =-2.5a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time v gs =-4.5v, v ds =-15v, i d =-5a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =-5a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3 w , r gen =6 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specifi c board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 3: mar. 2011 www.aosmd.com page 2 of 5
AO4801A typical electrical and thermal characteristics 17 52 10 0 18 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 30 50 70 90 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-2.5v i d =-2.5a v gs =-10v i d =-5a v gs =-4.5v i d =-3.5a 20 40 60 80 100 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2v -2.5v -4.5v -3v -10v v gs =-2.5v rev 3: mar. 2011 www.aosmd.com page 3 of 5
AO4801A typical electrical and thermal characteristics 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t j(max) =150c t a =25c 0 1 2 3 4 5 0 3 6 9 12 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-5a 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 1s 10ms single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90c/w rev 3: mar. 2011 www.aosmd.com page 4 of 5
AO4801A vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 3: mar. 2011 www.aosmd.com page 5 of 5
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